This insulation allows the device to be used in applications with very thin height requirements, providing designers with the flexibility to place the MOSFET where other items may be directly above it, such as shielding, buttons, or touch screens, which further compress the product height when depressed. This layout flexibility also translates into reduced parasitics, as the traces can be better optimized by not having to be routed to areas on the PCB with less height restrictions.
The 20-V n-channel Si8422DB features an ultra-compact 1.55-mm by 1.55-mm footprint with a slim 0.64-mm profile. The device offers a low on-resistance range from 0.043 ohms at 1.8-V VGS to 0.037 at 4.5-V VGS, with a maximum gate-source voltage of +/18 V.
Samples and production quantities of the new Si8422DB are currently available, with lead times of 10 to 12 weeks for larger orders.
