These new products are designed for radar applications employing the 3.1 to 3.4 GHz S-Band frequency.
Their high performance specifications feature excellent rated power with greater than 40% collector efficiency and superior power flatness of less than 0.5 dB. The transistors utilize advanced Microsemi chip design and processing enhancements for high power and high gain with a 100us pulse width and 10% duty cycle over the S-Band frequency range.
Expansion of our S-Band portfolio marks a significant step in our overall power transistors and modules development and marketing strategy, said Charlie Leader, vice president of Microsemi’s Microwave RF Power division. It also demonstrates the continuing commitment we have for the radar market and to our many customers designing advanced air traffic control and military radar systems.
The key features of 3134-200P power solution module:
Designed for S-Band Radar: 3.1-3.4 GHz.
Medium Pulse Format: 100 us, 10%.
Excellent Power Output: 200W.
High Power Gain: 8.0 dB.
Collector Efficiency: 40%.
In Compression.
Load Mismatch: VSWR 2:1.
Vcc: +36V.
Package: Hermetically Sealed.
