Vishay Intertechnology, Inc. (Vishay) has introduced new 190-V n-channel power MOSFET plus co-packaged 190-V power diode, SiA850DJ, with compact 2-mm by 2-mm footprint and an ultra-thin 0.75-mm profile. The SiA850DJ is offered in a PowerPAK SC-70 package and has an on-resistance rating at 1.8-V VGS. The device provides low on-resistance values from 17 ohms at 1.8-V VGS to 3.8 V at 4.5-V VGS, and a diode forward voltage of 1.2 V at 0.5 A.

Typical applications for SiA850DJ will incorporate boost dc-to-dc converters for the high-voltage piezoelectric motors and organic LED (OLED) backlighting in portable devices like cell phones, PDAs, MP3 players, and smart phones.

Integrating the MOSFET and the power diode into a same package saves the designers at least one-third of the PCB area, at the same time lowering the solution costs by discarding the need for an external diode. While larger devices feature on-resistance ratings down to 2.5 V, the SiA850DJ is rated down to 1.8 V, which additionally saves board space by decreasing the need for level shift circuitry.