The expanded portfolio of the company’s front-end solutions has five small and high performance UMTS PAs which support Bands I, II, IV, V and VIII, and the two dual band PAs that support the band combinations, bands I/VIII and II/V.

“Skyworks is proud to continue its tradition of delivering industry-leading solutions that meet today’s demanding 3G requirements,” stated Gregory L. Waters, executive vice president and general manager, front-end solutions. “Our newest family of power amplifiers offers significant benefits to handset OEMs who must constantly address size, cost and performance issues across a broad range of frequencies.”

The company’ family of WCDMA PAs:

The company’ Intera portfolio now has the:

SKY77186 for Band I: 1920-1980 MHz;

SKY77187 for Band II: 1850-1910 MHz;

SKY77188 for Band V, VI: 824-849 MHz;

SKY77189 for Band VIII: 880-915 MHz;

SKY77191 for Band IV, IX, X: 1710-1785 MHz.

The five new small and efficient 3 x 3 millimeters (mm) solutions are fully matched 10-pad surface mount modules. Because of the high efficiencies achieved throughout the complete power range; the devices offer unsurpassed talk-time advantages. They also meet the stringent spectral linearity requirements of high-speed downlink packet access (HSDPA) data transmission with the high PAE.

SKY77195 for Bands I and VIII: 1920-1980 MHz and 880-915 MHz;

SKY77196 for Bands II and V: 1850-1910 MHz and 824-849 MHz.

The two new 4 x 5 mm dual band PA modules offer convenient solutions for these new phone models. The company’ new integration techniques pack most of external passive components into the modules, needing only two external bypassing capacitors for two bands compared to 10 to 14 passives typically needed with two single band PA modules. This results in the unmatched bill of materials count savings and also up to 40 to 50% board area savings, allowing original equipment manufacturers (OEMs) to devote more functionality to phone without increasing its size.

The new single gallium arsenide (GaAs) microwave monolithic integrated circuit (MMIC) has all active circuitry in the module. The MMIC includes on-board bias circuitry, and also input and the interstage matching circuits. The output match into a 50-ohm load is realized off-chip within module package to optimize the efficiency and power performance.

The PA modules are manufactured with the company’ indium gallium phosphide (InGaP) heterojunction bipolar transistor (HBT) bipolar field effect transistor (BiFET) process that offers for all positive voltage DC supply operation while maintaining high efficiency and good linearity.