These special applications require an ultra thick layer of the new photoresist to assist cover topography on integrated circuit and to plate a very high aspect ratio features. The plating chemistries are complex and changing; hence the resist must also be robust to the different plating environments.
Through-Silicon Vias (TSV):
The new SIPR-7126 is also applicable to the semiconductor etch applications, such as MEMS and through-silicon vias (TSVs), where the process engineers must etch the complete thickness of the silicon to build device circuitry.
This flexible i-line photoresist can be developed by the standard TMAH solutions and can be exposed by the multiple exposure tools, like steppers and aligners; and can plate up to 100 microns in a single coat with the vertical profiles.
Ultra Thick Photoresist Features Incorporate:
Excellent flexibility with different plating chemistries;
Easy removal;
Easy rework and;
No post exposure bake needed.
The 7100 series has been in the production for many years and the new version, SIPR-7126, has been optimized to decrease the processing steps and enhance removability. This new photoresist is available for the sampling and evaluation by contacting Shin-Etsu MicroSi.
SPIE:
With the company’s more than 15-year history producing i-line photoresists, the product line has solved a multitude of manufacturing problems in the semiconductor applications. These products, along with the company’s MicroSi’s line of photolithography, packaging and the flexible printed circuit materials will be on display at the SPIE conference and exhibition, February 24 to February 25, 2009, at the San Jose Convention Center in San Jose, California.
